On Sale Offers New Products. Have You Seen. Add to Cart. Transistors and FETs. Written by Wayne Storr. Wayne Storr. Share This. Bipolar Junction Transistor Tutorial. Field Effect Transistor Tutorial. Due to the forward applied voltage V EB , the electrons in the N region experiences repulsive force and drifts across the lightly doped base region after overcoming the barrier potential. As the base region is lightly doped, only some of the drifted electrons recombine with the holes in the base region.
Now, the increased concentration of electrons in the base region causes more electrons to move across the collector region. As this region is reversed biased, the electrons are immediately collected by this region.
Thus, a proper flow of current is noticed and hence the emitter current is the summation of base and collector current.
It is a 3 terminal unipolar device that controls the flow of current through the device by the applied input voltage. Here, the 3 terminals are termed as the source, gate and drain. It is known so because the output current of the device is controlled by the field associated with depletion region.
As it is a voltage controlled device thus the applied input potential allows the movement of electrons hence causing current to flow through the device. The figure below shows an n channel JFET with the positive voltage at the drain terminal. In the absence of any applied input voltage, the two depletion region around the PN junctions is equally wide and symmetrical.
The operation depends on the control of a junction depletion width under reverse bias. The operation depends on the injection of minority carries across a forward biased. Voltage driven device. The current through the two terminals is controlled by a voltage at the third terminal gate. Current driven device. The current through the two terminals is controlled by a current at the third terminals base. Low noise level.
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